HXY MOSFET HIRFP450PBF

HXY MOSFET · FETs & Power MOSFETs · MPN HIRFP450PBF

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Specifications

ConfigurationStandalone
Gate Charge(Qg)150nC@10V
Drain to Source Voltage500V
Output Capacitance(Coss)720pF
Current - Continuous Drain(Id)14A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation190W
Reverse Transfer Capacitance (Crss@Vds)340pF
RDS(on)430mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)2.6nF

Technical details

N-Channel 500V 14A 190W Through Hole TO-247S

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