HXY MOSFET HIRF630PBF

HXY MOSFET · FETs & Power MOSFETs · MPN HIRF630PBF

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Specifications

ConfigurationStandalone
Drain to Source Voltage200V
Gate Charge(Qg)13nC@10V
Output Capacitance(Coss)90pF
Current - Continuous Drain(Id)9A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation75W
RDS(on)220mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)10pF
Number1 N-channel
Input Capacitance(Ciss)600pF

Technical details

N-Channel 200V 9A 75W Through Hole TO-220

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