HXY MOSFET HIRF530NPBF

HXY MOSFET · FETs & Power MOSFETs · MPN HIRF530NPBF

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Specifications

ConfigurationStandalone
Gate Charge(Qg)53nC@10V
Drain to Source Voltage100V
Output Capacitance(Coss)276pF
Current - Continuous Drain(Id)17A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2V
Reverse Transfer Capacitance (Crss@Vds)88pF
RDS(on)80mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.331nF
TypeN-Channel

Technical details

N-Channel 100V 17A Through Hole TO-220C

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