HXY MOSFET · FETs & Power MOSFETs · MPN HIPD650P06NM
No reviews yet — be the first to review HXY MOSFET HIPD650P06NM.
| Configuration | Standalone |
|---|---|
| Drain to Source Voltage | 60V |
| Gate Charge(Qg) | 6.1nC@4.5V |
| Output Capacitance(Coss) | 100pF |
| Current - Continuous Drain(Id) | 20A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Pd - Power Dissipation | 25W |
| Reverse Transfer Capacitance (Crss@Vds) | 85pF |
| RDS(on) | 48mΩ@10V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 585pF |
P-Channel 60V 20A 25W Surface Mount TO-252-2L