HXY MOSFET · FETs & Power MOSFETs · MPN HIPD50N06S4L08ATMA2
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| Configuration | Standalone |
|---|---|
| Drain to Source Voltage | 60V |
| Gate Charge(Qg) | 33nC@10V |
| Output Capacitance(Coss) | 258pF |
| Current - Continuous Drain(Id) | 70A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 116W |
| RDS(on) | 6.6mΩ@10V |
| Reverse Transfer Capacitance (Crss@Vds) | 225pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 4nF |
N-Channel 60V 80A 104W Surface Mount TO-252-2L