HXY MOSFET · FETs & Power MOSFETs · MPN HIPD30N03S4L09ATMA1
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| Gate Charge(Qg) | 20nC@4.5V |
|---|---|
| Drain to Source Voltage | 30V |
| Configuration | Standalone |
| Output Capacitance(Coss) | 267pF |
| Current - Continuous Drain(Id) | 100A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.5V |
| Pd - Power Dissipation | 53W |
| RDS(on) | 3.8mΩ@10V |
| Reverse Transfer Capacitance (Crss@Vds) | 210pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 2.295nF |
30V 100A 53W Surface Mount TO-252-2L