HXY MOSFET · FETs & Power MOSFETs · MPN HINN700TK190B
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| Gate Charge(Qg) | 2.3nC |
|---|---|
| Drain to Source Voltage | 725V |
| Output Capacitance(Coss) | 27pF |
| Current - Continuous Drain(Id) | 10A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.6V |
| Pd - Power Dissipation | 73W |
| Technology | E-mode |
| Reverse Transfer Capacitance (Crss@Vds) | 0.4pF |
| RDS(on) | 160mΩ |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 83pF |
725V 10A 1.6V 73W 160mΩ 1 N-channel N-Channel TO-252-2L Single FETs, MOSFETs RoHS