HXY MOSFET · FETs & Power MOSFETs · MPN HIMW120R220M1H
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| Gate Charge(Qg) | 37.4nC |
|---|---|
| Drain to Source Voltage | 1.2kV |
| Output Capacitance(Coss) | 42pF |
| Current - Continuous Drain(Id) | 17A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 116W |
| RDS(on) | 208mΩ |
| Reverse Transfer Capacitance (Crss@Vds) | 6pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 624pF |
| Type | N-Channel |
1.2kV 17A 4V 116W 208mΩ 1 N-channel N-Channel TO-247-3 Single FETs, MOSFETs RoHS