HXY MOSFET · FETs & Power MOSFETs · MPN HIGLD60R190D1
No reviews yet — be the first to review HXY MOSFET HIGLD60R190D1.
| Gate Charge(Qg) | 2.3nC |
|---|---|
| Drain to Source Voltage | 650V |
| Output Capacitance(Coss) | 27pF |
| Current - Continuous Drain(Id) | 10A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.6V |
| Pd - Power Dissipation | 75W |
| Technology | E-mode |
| Reverse Transfer Capacitance (Crss@Vds) | 0.4pF |
| RDS(on) | 160mΩ@6V |
| Number | - |
| Input Capacitance(Ciss) | 83pF |
650V 10A 1.6V 75W 160mΩ@6V N-Channel DFN-8(8x8) Single FETs, MOSFETs RoHS