HXY MOSFET HFDS8958B

HXY MOSFET · FETs & Power MOSFETs · MPN HFDS8958B

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Specifications

Drain to Source Voltage30V
ConfigurationStandalone
Gate Charge(Qg)5.2nC@10V
Output Capacitance(Coss)45pF
Current - Continuous Drain(Id)6A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.8V
Pd - Power Dissipation2W
Reverse Transfer Capacitance (Crss@Vds)35pF
RDS(on)16mΩ@10V
Number1 N-Channel + 1 P-Channel
Input Capacitance(Ciss)255pF

Technical details

N-Channel+P-Channel Array 30V 6A 2W Surface Mount SOP-8

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