HXY MOSFET · FETs & Power MOSFETs · MPN HFDS8878
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| Gate Charge(Qg) | 15nC@10V |
|---|---|
| Drain to Source Voltage | 30V |
| Configuration | - |
| Current - Continuous Drain(Id) | 11.5A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Pd - Power Dissipation | 3.2W |
| RDS(on) | 22.5mΩ@4.5V |
| Reverse Transfer Capacitance (Crss@Vds) | 99pF |
| Number | - |
| Input Capacitance(Ciss) | 633pF |
| Type | N-Channel |
30V 11.5A 2.5V 3.2W 22.5mΩ@4.5V N-Channel SOP-8 Single FETs, MOSFETs RoHS