HXY MOSFET · FETs & Power MOSFETs · MPN HFDP083N15AF102
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| Gate Charge(Qg) | 45nC@10V |
|---|---|
| Drain to Source Voltage | 150V |
| Configuration | Standalone |
| Output Capacitance(Coss) | 268pF |
| Current - Continuous Drain(Id) | 120A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Pd - Power Dissipation | 178.6W |
| Reverse Transfer Capacitance (Crss@Vds) | 9.4pF |
| RDS(on) | 9.5mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 3.31nF |
N-Channel 150V 120A 178.6W Through Hole TO-220