HXY MOSFET · FETs & Power MOSFETs · MPN HFDG6332C
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| Drain to Source Voltage | 20V |
|---|---|
| Configuration | Standalone |
| Gate Charge(Qg) | - |
| Output Capacitance(Coss) | 13pF |
| Current - Continuous Drain(Id) | 750mA |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.1V |
| Pd - Power Dissipation | - |
| Reverse Transfer Capacitance (Crss@Vds) | 9pF |
| RDS(on) | 210mΩ@4.5V |
| Number | 1 N-Channel + 1 P-Channel |
| Input Capacitance(Ciss) | 79pF |
N-Channel+P-Channel Array 20V 0.75A Surface Mount SOT-363(SC-70-6)