HXY MOSFET · FETs & Power MOSFETs · MPN HFDD5614P
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| Gate Charge(Qg) | 48nC@10V |
|---|---|
| Configuration | Standalone |
| Drain to Source Voltage | 60V |
| Output Capacitance(Coss) | 220pF |
| Current - Continuous Drain(Id) | 20A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.8V |
| Pd - Power Dissipation | 40W |
| Reverse Transfer Capacitance (Crss@Vds) | 155pF |
| RDS(on) | 64mΩ@10V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 2.46nF |
60V 20A 40W Surface Mount TO-252-2L