HXY MOSFET HD6956

HXY MOSFET · FETs & Power MOSFETs · MPN HD6956

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Specifications

ConfigurationStandalone
Gate Charge(Qg)19.3nC@4.5V
Drain to Source Voltage60V
Output Capacitance(Coss)145pF
Current - Continuous Drain(Id)50A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation45W
Reverse Transfer Capacitance (Crss@Vds)97pF
RDS(on)11mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)2.423nF

Technical details

60V 50A 2.5V 45W 11mΩ@10V 1 N-channel N-Channel TO252-2L Single FETs, MOSFETs RoHS

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