HXY MOSFET · FETs & Power MOSFETs · MPN HCS65R320S-FM-HXY
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| Configuration | - |
|---|---|
| Gate Charge(Qg) | 11.2nC |
| Drain to Source Voltage | 650V |
| Current - Continuous Drain(Id) | 15A |
| Output Capacitance(Coss) | 20pF |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 52W |
| RDS(on) | 220mΩ |
| Reverse Transfer Capacitance (Crss@Vds) | 0.9pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 180pF |
650V 15A 4V 52W 220mΩ 1 N-channel N-Channel TO-220F Single FETs, MOSFETs RoHS