HXY MOSFET HCJU30P10

HXY MOSFET · FETs & Power MOSFETs · MPN HCJU30P10

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Specifications

ConfigurationStandalone
Gate Charge(Qg)147nC@10V
Drain to Source Voltage100V
Output Capacitance(Coss)195pF
Current - Continuous Drain(Id)30A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))1.8V
Pd - Power Dissipation107W
Reverse Transfer Capacitance (Crss@Vds)70pF
RDS(on)46mΩ@10V
Number1 P-Channel
Input Capacitance(Ciss)8.056nF

Technical details

P-Channel 100V 30A 107W Surface Mount TO-252-2L

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