HXY MOSFET · FETs & Power MOSFETs · MPN HC3M0120090D
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| Gate Charge(Qg) | 21nC |
|---|---|
| Configuration | - |
| Drain to Source Voltage | 900V |
| Output Capacitance(Coss) | 48pF |
| Current - Continuous Drain(Id) | 23A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3.5V |
| Pd - Power Dissipation | 97W |
| RDS(on) | - |
| Reverse Transfer Capacitance (Crss@Vds) | 3pF |
| Input Capacitance(Ciss) | 414pF |
| Type | N-Channel |
900V 23A 3.5V 97W N-Channel TO-247 Single FETs, MOSFETs RoHS