HXY MOSFET · FETs & Power MOSFETs · MPN HC3M0021120D
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| Gate Charge(Qg) | 160nC |
|---|---|
| Configuration | - |
| Drain to Source Voltage | 1.2kV |
| Output Capacitance(Coss) | 180pF |
| Current - Continuous Drain(Id) | 81A |
| Operating Temperature - | -40℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 3.6V |
| Pd - Power Dissipation | 469W |
| RDS(on) | 28.8mΩ@15V |
| Reverse Transfer Capacitance (Crss@Vds) | 12pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 4.818nF |
1.2kV 81A 3.6V 469W 28.8mΩ@15V 1 N-channel N-Channel TO-247 Single FETs, MOSFETs RoHS