HXY MOSFET HC3M001K170J

HXY MOSFET · FETs & Power MOSFETs · MPN HC3M001K170J

No reviews yet — be the first to review HXY MOSFET HC3M001K170J.

Specifications

Gate Charge(Qg)16.5nC
Drain to Source Voltage1.7kV
Output Capacitance(Coss)15.3pF
Current - Continuous Drain(Id)6.7A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))1.8V
Pd - Power Dissipation86W
Reverse Transfer Capacitance (Crss@Vds)2.2pF
RDS(on)700mΩ@20V
Number1 N-channel
Input Capacitance(Ciss)285pF
TypeN-Channel

Technical details

N-Channel 1.7kV 6.7A Surface Mount TO-263-7L

Related FETs & Power MOSFETs