HXY MOSFET · FETs & Power MOSFETs · MPN HC2M1000170D
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| Gate Charge(Qg) | 22nC |
|---|---|
| Drain to Source Voltage | 1.7kV |
| Output Capacitance(Coss) | 19pF |
| Current - Continuous Drain(Id) | 5A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 69W |
| Reverse Transfer Capacitance (Crss@Vds) | 2.2pF |
| RDS(on) | 1.4Ω |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 215pF |
| Type | N-Channel |
1.7kV 5A 69W Through Hole TO-247-3L