HXY MOSFET · FETs & Power MOSFETs · MPN HC2M0650170D
No reviews yet — be the first to review HXY MOSFET HC2M0650170D.
| Gate Charge(Qg) | 23nC |
|---|---|
| Configuration | - |
| Drain to Source Voltage | 1.7kV |
| Current - Continuous Drain(Id) | 7A |
| Output Capacitance(Coss) | 13pF |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 62W |
| RDS(on) | 850mΩ@20V |
| Reverse Transfer Capacitance (Crss@Vds) | 2.1pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 198pF |
N-Channel 1.7kV 7A 62W Through Hole TO-247