HXY MOSFET · FETs & Power MOSFETs · MPN HC2M0160120D
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| Gate Charge(Qg) | 40nC |
|---|---|
| Drain to Source Voltage | 1.2kV |
| Output Capacitance(Coss) | 55pF |
| Current - Continuous Drain(Id) | 18A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 125W |
| Reverse Transfer Capacitance (Crss@Vds) | 5pF |
| RDS(on) | 196mΩ |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 606pF |
| Type | N-Channel |
1.2kV 18A Through Hole TO-247-3L