HXY MOSFET HC2M0040120K

HXY MOSFET · FETs & Power MOSFETs · MPN HC2M0040120K

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Specifications

Gate Charge(Qg)131nC
Drain to Source Voltage1.2kV
Output Capacitance(Coss)161pF
Current - Continuous Drain(Id)78A
Operating Temperature --40℃~+175℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation405W
Reverse Transfer Capacitance (Crss@Vds)14pF
RDS(on)50mΩ
Number1 N-channel
Input Capacitance(Ciss)2.101nF
TypeN-Channel

Technical details

1.2kV 78A 405W Through Hole TO-247-4L

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