HXY MOSFET · FETs & Power MOSFETs · MPN HC1M60120D
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| Gate Charge(Qg) | 42nC |
|---|---|
| Configuration | - |
| Drain to Source Voltage | 1.2kV |
| Current - Continuous Drain(Id) | 40A |
| Output Capacitance(Coss) | 59pF |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 3.6V |
| Pd - Power Dissipation | 214W |
| RDS(on) | 75mΩ |
| Reverse Transfer Capacitance (Crss@Vds) | 4.1pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 940pF |
N-Channel 1.2kV 40A 214W Through Hole TO-247