HXY MOSFET · FETs & Power MOSFETs · MPN HC1M320120D
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| Gate Charge(Qg) | 23.5nC |
|---|---|
| Configuration | - |
| Drain to Source Voltage | 1.2kV |
| Output Capacitance(Coss) | 24pF |
| Current - Continuous Drain(Id) | 7.6A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 60W |
| RDS(on) | 450mΩ@18V |
| Reverse Transfer Capacitance (Crss@Vds) | 4pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 324pF |
N-Channel 1.2kV 7.6A 60W Through Hole TO-247-4L