HXY MOSFET · FETs & Power MOSFETs · MPN HC1M30065D
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| Gate Charge(Qg) | 98nC |
|---|---|
| Configuration | - |
| Drain to Source Voltage | 650V |
| Output Capacitance(Coss) | 180pF |
| Current - Continuous Drain(Id) | 90A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 428W |
| RDS(on) | 40mΩ@18V |
| Reverse Transfer Capacitance (Crss@Vds) | 22pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 2.079nF |
N-Channel 650V 90A 428W Through Hole TO-247