HXY MOSFET · FETs & Power MOSFETs · MPN HC1M15120S
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| Gate Charge(Qg) | 222nC |
|---|---|
| Configuration | - |
| Drain to Source Voltage | 1.2kV |
| Current - Continuous Drain(Id) | 125A |
| Output Capacitance(Coss) | 214pF |
| Operating Temperature - | -40℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 681W |
| RDS(on) | 22mΩ@18V |
| Reverse Transfer Capacitance (Crss@Vds) | 26pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 4.508nF |
N-Channel 1.2kV 125A 681W Screw Terminals SOT-227