HXY MOSFET · FETs & Power MOSFETs · MPN HAOT10N65
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| Drain to Source Voltage | 650V |
|---|---|
| Configuration | Standalone |
| Gate Charge(Qg) | 44nC@10V |
| Output Capacitance(Coss) | 136pF |
| Current - Continuous Drain(Id) | 10A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 130W |
| Reverse Transfer Capacitance (Crss@Vds) | 10.5pF |
| RDS(on) | 800mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.57nF |
N-Channel 650V 10A 130W Through Hole TO-220F