HXY MOSFET · FETs & Power MOSFETs · MPN HAOD538
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| Drain to Source Voltage | 30V |
|---|---|
| Configuration | Standalone |
| Gate Charge(Qg) | 143nC@10V |
| Output Capacitance(Coss) | 1.022nF |
| Current - Continuous Drain(Id) | 160A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.4V |
| Pd - Power Dissipation | 87W |
| RDS(on) | 1.6mΩ@10V |
| Reverse Transfer Capacitance (Crss@Vds) | 718pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 6.272nF |
30V 160A 2.4V 87W 1.6mΩ@10V 1 N-channel N-Channel TO-252-2L Single FETs, MOSFETs RoHS