HXY MOSFET HAO3456

HXY MOSFET · FETs & Power MOSFETs · MPN HAO3456

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Specifications

Drain to Source Voltage30V
Gate Charge(Qg)5nC@4.5V
ConfigurationStandalone
Output Capacitance(Coss)60pF
Current - Continuous Drain(Id)5.8A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.5V
Pd - Power Dissipation1W
RDS(on)22mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)53pF
Number1 N-channel
Input Capacitance(Ciss)420pF

Technical details

N-Channel 30V 5.8A 1.4W Surface Mount SOT-23

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