HXY MOSFET · FETs & Power MOSFETs · MPN HAO3415
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| Drain to Source Voltage | 20V |
|---|---|
| Configuration | Standalone |
| Gate Charge(Qg) | 12nC@4.5V |
| Output Capacitance(Coss) | 165pF |
| Current - Continuous Drain(Id) | 4.1A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 550mV |
| Pd - Power Dissipation | 1.4W |
| Reverse Transfer Capacitance (Crss@Vds) | 120pF |
| RDS(on) | 34mΩ@4.5V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 950pF |
P-Channel 20V 4.1A 1.4W Surface Mount SOT-23-3L