HXY MOSFET HAM6968N

HXY MOSFET · FETs & Power MOSFETs · MPN HAM6968N

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Specifications

Drain to Source Voltage20V
ConfigurationCommon Drain
Gate Charge(Qg)10nC@4.5V
Output Capacitance(Coss)330pF
Current - Continuous Drain(Id)6A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))700mV
Pd - Power Dissipation1.5W
RDS(on)21mΩ@4.5V
Reverse Transfer Capacitance (Crss@Vds)140pF
Number2 N-Channel
Input Capacitance(Ciss)600pF

Technical details

N-Channel 20V 9A 1.5W Surface Mount TSSOP-8

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