HXY MOSFET · FETs & Power MOSFETs · MPN HAIMZH120R030M1T
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| Drain to Source Voltage | 1.2kV |
|---|---|
| Gate Charge(Qg) | 222nC |
| Output Capacitance(Coss) | 214pF |
| Current - Continuous Drain(Id) | 117A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 556W |
| RDS(on) | 49mΩ |
| Reverse Transfer Capacitance (Crss@Vds) | 26pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 4.508nF |
| Type | N-Channel |
1.2kV 117A 4V 556W 49mΩ 1 N-channel N-Channel TO-247-4L Single FETs, MOSFETs RoHS