HXY MOSFET · Transistors (BJTs) · MPN H2SC3357-RE
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| Current - Collector Cutoff | 1uA |
|---|---|
| Transition frequency(fT) | 6.5GHz |
| Collector - Emitter Voltage VCEO | 12V |
| DC Current Gain | 250 |
| Emitter-Base Voltage VEBO | 5V |
| Pd - Power Dissipation | 1.2W |
| Number | 1 NPN |
| type | NPN |
| Current - Collector(Ic) | 100mA |
| Operating Temperature | -55℃~+150℃ |
| Vce Saturation(VCE(sat)) | 400mV |
Bipolar (BJT) Transistor NPN 12V 100mA 6.5GHz 1.2W Surface Mount SOT-89