HXY MOSFET · FETs & Power MOSFETs · MPN H2N7002SDW1T1G
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| Configuration | Standalone |
|---|---|
| Drain to Source Voltage | 60V |
| Output Capacitance(Coss) | 25pF |
| Current - Continuous Drain(Id) | 115mA |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.6V |
| Pd - Power Dissipation | 150mW |
| Reverse Transfer Capacitance (Crss@Vds) | 5pF |
| RDS(on) | 1.3Ω@10V |
| Number | 2 N-Channel |
| Input Capacitance(Ciss) | 50pF |
| Type | N-Channel |
60V 115mA 1.6V 150mW 1.3Ω@10V 2 N-Channel N-Channel SOT-363 Single FETs, MOSFETs RoHS