HXY MOSFET · FETs & Power MOSFETs · MPN H2N7002K7
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| Configuration | Standalone |
|---|---|
| Drain to Source Voltage | 60V |
| Gate Charge(Qg) | 1.7nC@4.5V |
| Output Capacitance(Coss) | 11pF |
| Current - Continuous Drain(Id) | 300mA |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.2V |
| Pd - Power Dissipation | 350mW |
| RDS(on) | 1Ω@10V |
| Reverse Transfer Capacitance (Crss@Vds) | 4.2pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 21pF |
60V 0.3A 0.35W Surface Mount SOT-23