HXY MOSFET FDV301N-HXY

HXY MOSFET · FETs & Power MOSFETs · MPN FDV301N-HXY

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Specifications

ConfigurationStandalone
Drain to Source Voltage30V
Output Capacitance(Coss)9pF
Current - Continuous Drain(Id)100mA
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.5V
Pd - Power Dissipation350mW
Reverse Transfer Capacitance (Crss@Vds)4pF
RDS(on)1.5Ω@10V
Number1 N-channel
Input Capacitance(Ciss)13pF
TypeN-Channel

Technical details

N-Channel 30V 0.1A 0.35W Surface Mount SOT-23

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