HXY MOSFET · FETs & Power MOSFETs · MPN FDS89161LZ-HXY
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| Configuration | Standalone |
|---|---|
| Gate Charge(Qg) | 19.5nC@10V |
| Drain to Source Voltage | 100V |
| Output Capacitance(Coss) | 60pF |
| Current - Continuous Drain(Id) | 8A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.5V |
| Pd - Power Dissipation | 1.5W |
| Reverse Transfer Capacitance (Crss@Vds) | 37.4pF |
| RDS(on) | 104mΩ@10V |
| Number | 2 N-Channel |
| Input Capacitance(Ciss) | 1.535nF |
N-Channel Array 100V 8A 1.5W Surface Mount SOP-8