HXY MOSFET · FETs & Power MOSFETs · MPN FDS6673AZ-HXY
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| Configuration | Standalone |
|---|---|
| Gate Charge(Qg) | 30nC@4.5V |
| Drain to Source Voltage | 30V |
| Output Capacitance(Coss) | 508pF |
| Current - Continuous Drain(Id) | 15A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Pd - Power Dissipation | 1.5W |
| RDS(on) | 5.8mΩ@10V |
| Reverse Transfer Capacitance (Crss@Vds) | 421pF |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 3.448nF |
30V 15A 2.5V 1.5W 5.8mΩ@10V 1 P-Channel P-Channel SOP-8 Single FETs, MOSFETs RoHS