HXY MOSFET · FETs & Power MOSFETs · MPN FDS6670S-HXY
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| Configuration | Standalone |
|---|---|
| Drain to Source Voltage | 30V |
| Gate Charge(Qg) | 6nC@4.5V |
| Output Capacitance(Coss) | 77pF |
| Current - Continuous Drain(Id) | 8.5A |
| Gate Threshold Voltage (Vgs(th)) | 1.5V |
| Pd - Power Dissipation | 1.5W |
| RDS(on) | 14.5mΩ@10V |
| Reverse Transfer Capacitance (Crss@Vds) | 59pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 583pF |
| Type | N-Channel |
30V 8.5A 1.5V 1.5W 14.5mΩ@10V 1 N-channel N-Channel SOP-8 Single FETs, MOSFETs RoHS