HXY MOSFET · FETs & Power MOSFETs · MPN FDPF16N50-HXY
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| Configuration | Standalone |
|---|---|
| Gate Charge(Qg) | 63nC@10V |
| Drain to Source Voltage | 500V |
| Output Capacitance(Coss) | 25pF |
| Current - Continuous Drain(Id) | 20A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 165W |
| RDS(on) | 260mΩ@10V |
| Reverse Transfer Capacitance (Crss@Vds) | 286pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 2.864nF |
500V 20A 4V 165W 260mΩ@10V 1 N-channel N-Channel TO-220F Single FETs, MOSFETs RoHS