HXY MOSFET · FETs & Power MOSFETs · MPN FDP4D5N10C-HXY
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| Output Capacitance(Coss) | 592pF |
|---|---|
| Pd - Power Dissipation | 178W |
| Configuration | Standalone |
| Gate Charge(Qg) | 69nC@10V |
| Drain to Source Voltage | 100V |
| Current - Continuous Drain(Id) | 120A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| RDS(on) | 4.1mΩ@10V |
| Reverse Transfer Capacitance (Crss@Vds) | 19.8pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 4.102nF |
178W 100V 120A 3V 4.1mΩ@10V 1 N-channel N-Channel TO-220C Single FETs, MOSFETs RoHS