HXY MOSFET · FETs & Power MOSFETs · MPN FDN5632N-F085-HXY
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| Configuration | Standalone |
|---|---|
| Gate Charge(Qg) | 5.5nC@10V |
| Drain to Source Voltage | 60V |
| Output Capacitance(Coss) | 148pF |
| Current - Continuous Drain(Id) | 4.5A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Pd - Power Dissipation | 8W |
| Reverse Transfer Capacitance (Crss@Vds) | 7pF |
| RDS(on) | 73mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 695pF |
60V 4.5A 8W Surface Mount SOT-23-3L