HXY MOSFET · FETs & Power MOSFETs · MPN FDMS6681Z-HXY
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| Configuration | Standalone |
|---|---|
| Gate Charge(Qg) | 60nC@10V |
| Drain to Source Voltage | 30V |
| Output Capacitance(Coss) | 255pF |
| Current - Continuous Drain(Id) | 100A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Pd - Power Dissipation | 120W |
| Reverse Transfer Capacitance (Crss@Vds) | 140pF |
| RDS(on) | 3mΩ@10V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 3.45nF |
P-Channel 30V 100A 120W Surface Mount DFN-8(5x6)