HXY MOSFET FDMC8878-HXY

HXY MOSFET · FETs & Power MOSFETs · MPN FDMC8878-HXY

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Specifications

ConfigurationStandalone
Gate Charge(Qg)7.2nC@4.5V
Drain to Source Voltage30V
Output Capacitance(Coss)81pF
Current - Continuous Drain(Id)30A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation20W
Reverse Transfer Capacitance (Crss@Vds)65pF
RDS(on)8mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)572pF

Technical details

N-Channel 30V 30A 20W Surface Mount DFN-8(3x3)

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