HXY MOSFET · FETs & Power MOSFETs · MPN FDD6690S-HXY
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| Configuration | Standalone |
|---|---|
| Drain to Source Voltage | 30V |
| Gate Charge(Qg) | 9.8nC@4.5V |
| Current - Continuous Drain(Id) | 50A |
| Output Capacitance(Coss) | 131pF |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Pd - Power Dissipation | 37.5W |
| RDS(on) | 7.5mΩ@10V |
| Reverse Transfer Capacitance (Crss@Vds) | 109pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 940pF |
30V 50A 2.5V 37.5W 7.5mΩ@10V 1 N-channel N-Channel TO-252-2L Single FETs, MOSFETs RoHS