HXY MOSFET FDD3706-HXY

HXY MOSFET · FETs & Power MOSFETs · MPN FDD3706-HXY

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Specifications

ConfigurationStandalone
Gate Charge(Qg)16nC@4.5V
Drain to Source Voltage20V
Output Capacitance(Coss)170pF
Current - Continuous Drain(Id)40A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))900mV
Pd - Power Dissipation15.6W
Reverse Transfer Capacitance (Crss@Vds)135pF
RDS(on)7.5mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)1.4nF

Technical details

N-Channel 20V 40A 15.6W Surface Mount TO-252-2L

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