HXY MOSFET · FETs & Power MOSFETs · MPN E3M0075120D-HXY
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| Configuration | - |
|---|---|
| Drain to Source Voltage | 1.2kV |
| Gate Charge(Qg) | 71nC |
| Output Capacitance(Coss) | 92pF |
| Current - Continuous Drain(Id) | 36A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 192W |
| Reverse Transfer Capacitance (Crss@Vds) | 7.6pF |
| RDS(on) | 98mΩ |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.13nF |
1.2kV 36A 4V 192W 98mΩ 1 N-channel N-Channel TO-247 Single FETs, MOSFETs RoHS