HXY MOSFET · FETs & Power MOSFETs · MPN DMWS120H100SM4-HXY
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| Drain to Source Voltage | 1.2kV |
|---|---|
| Gate Charge(Qg) | 53nC |
| Current - Continuous Drain(Id) | 32A |
| Output Capacitance(Coss) | 58pF |
| Operating Temperature - | -40℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 3.6V |
| Pd - Power Dissipation | 136W |
| RDS(on) | 90mΩ |
| Reverse Transfer Capacitance (Crss@Vds) | 2pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.39nF |
| Type | N-Channel |
1.2kV 32A 3.6V 136W 90mΩ 1 N-channel N-Channel TO-247-4L Single FETs, MOSFETs RoHS